Stacked Common-Base vs Common-Emitter mmWave PA Cells and 68–105 GHz Broadband Asymmetrical PA in 250nm InP HBT

نویسندگان

چکیده

In this paper, we perform a comparative analysis between stacked common-emitter (SCE) and common-base topologies (SCB) for high efficiency broadband millimeter-Wave (mmWave) power amplifiers (PAs) in 250 nm InP-based heterojunction bipolar transistor (HBT) technology. We propose an analytical approach to design PA cells accounting complex load impedance intra-matching transistors allow optimal loadpull operation of both the devices stack. demonstrate how SCB cell can higher gain, mitigated trade-off linearity, when compared more well-established SCE at mmWave frequencies. The designed achieve measured gain 11.8 dB/6dB 33%/34% peak PAE, 16.8%/14.5% PAE 6-dB back-off, Psat 18.7 dBm/19.6 dBm 90 GHz. demonstrates superior achieves EVM 2.38% 11.8-dBm average supporting 3 Gbps 64-QAM. 17.9-18.9-dBm across 80–110 GHz is one highest efficiency, linear PAs W-band using InP Utilizing cells, asymmetrical combining circuit large relatively bandwidth. operates 68–105 $P_{sat,3dB}$ bandwidth with 21.5 saturation 24% PAE.

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ژورنال

عنوان ژورنال: IEEE Access

سال: 2023

ISSN: ['2169-3536']

DOI: https://doi.org/10.1109/access.2023.3244127